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dc.contributor.authorKeprate, Arvind
dc.contributor.authorBagalkot, Nikhil
dc.date.accessioned2023-06-19T11:05:45Z
dc.date.available2023-06-19T11:05:45Z
dc.date.created2023-01-30T10:34:34Z
dc.date.issued2022
dc.identifier.isbn978-0-323-98897-1
dc.identifier.issn2468-6514
dc.identifier.urihttps://hdl.handle.net/11250/3072046
dc.description.abstractThe chapter discusses the framework for developing a Digital Twin (DT) for the process safety management (PSM) of small-bore piping (SBP) on a typical offshore platform. One of the important problems during the PSM of SBP is that due to significantly large number of SBPs on a process facility it is very difficult to place sensors at small bore connection (SBC) for stress estimation. In absence of the stress values, it is difficult to estimate the remaining fatigue life (RFL) of SBC which further impedes the inspection planning. Thus, in this chapter, a methodology comprising of CFD, FEA and Machine Learning is sued to obtain a virtual sensor for stress estimation at the SBC. The input to the virtual sensor is process parameters such as pressure and flow velocity while output is the maximum Von-Mises stress at the SBC. Thereafter, probabilistic crack growth law coupled with Bayesian Network is used to develop a DT for RFL estimation of SBP, which in turn is used to obtain reliability curves and inspection plans. Online deployment of the developed DT will give an up-to-date RFL estimates and inspection plans which can be used then be used for PSM of the SBP.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.relation.ispartofMethods to Assess and Manage Process Safety in Digitalized Process System Volume 6,
dc.relation.ispartofseriesMethods in Chemical Process Safety;
dc.titleUse of digital twins for process safety managementen_US
dc.typeChapteren_US
dc.typeJournal articleen_US
dc.description.versionsubmittedVersionen_US
cristin.ispublishedtrue
cristin.fulltextpreprint
cristin.qualitycode1
dc.identifier.cristin2118026
dc.source.journalMethods in Chemical Process Safetyen_US
dc.source.pagenumber23en_US


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